| Authors | محمد الماسی کاشی-عبد العلی رمضانی-مریم غفاری-وحیده بیضی اصفهانی |
|---|---|
| Journal | J CRYST GROWTH |
| Paper Type | Full Paper |
| Published At | ۲۰۰۹-۸-۰۱ |
| Journal Grade | ISI |
| Journal Type | Typographic |
| Journal Country | Iran, Islamic Republic Of |
| Journal Index | ISI ,SCOPUS |
Abstract
Non-symmetricreductive/oxidativevoltagewasemployedtoelectrodeposittheConanowiresthrough the aluminabarrierlayerintoporousaluminumoxidetemplatesgrowninoxalicacid.Theminimum and maximumoxidativevoltageswere12and18Vwhilethemaximumdifferencebetweenthe oxidativeandreductivevoltagewas6V.Theeffectofbarrierlayermodificationonthegrowthrateof the Conanowiresduringtheelectrodepositionprocedurewasstudied.Inordertoinvestigatetheeffects of thenon-symmetricelectrodepositionvoltageonthegrowthratethewire’slength,thesaturation magnetization,theinstantaneousandthermscurrentweremeasured.Differentreductive/oxidative voltagesenableustofabricateelectrodepositednanowireswithawidevarietyofgrowthrates.Using same reductivevoltage,reducingtheoxidativevoltageincreasedthegrowthrate.Atthesamereductive voltage(18V),averagegrowthratewasseentoincrease2.5times,whentheoxidativevoltagereduces to 12Vfrominitially18V.Thebarrierlayerthicknessofthesamplesmadewithdifferentnon- symmetricreductive/oxidativedepositionvoltagewasinvestigatedthroughimpedancemeasurement during thedepositionprocedure.Reducingthegrowthrateofdepositionreducestheintensityofthe (100)preferentialdirectionofhcpphasetherebyimprovingthemagneticproperties.Manipulatingthe growthratethroughnon-symmetricelectrodepositionenablesustofabricatetheConanowireswith coercivity rangingfrom460to1850Oe.