| Authors | سیدفرشاد اختریان فر,ونگ,علی خیاطیان,محمد الماسی کاشی |
|---|---|
| Conference Title | 5TH RIAPA Meeting On Low Dİmensional Systems |
| Holding Date of Conference | 2017-5-23 |
| Event Place | تبریز |
| Presentation | SPEECH |
| Conference Level | National Conferences |
Abstract
We present a fabrication of a field-effect transistor device based on a single ZnO nanowire and graphene nanoribbon heterostructures. We demonstrate that it is possible to fabricate a graphene nanoribbon using a single ZnO nanowire as a shadow mask for oxygen reactive ion etching. Au electrodes were also coated on two sides of ZnO nanowire using UV photolithography. The fabricated nanowire/graphene nanoribbon heterostructure was electrically analysed to obtain field effect properties of device.