| Authors | Ling Xu,,محمود نیکو فرد,Xaveer J. M. Leijtens,Tjibbe de Vries,Elbertus Smalbrugge,Richard Nötzel,Yok Siang Oei,Meint K. Smit |
|---|---|
| Journal | IEEE PHOTONICS TECHNOLOGY LETTERS |
| Page number | 1941 |
| Volume number | 20 |
| IF | ثبت نشده |
| Paper Type | Full Paper |
| Published At | 2008-12-01 |
| Journal Grade | Scientific - research |
| Journal Type | Electronic |
| Journal Country | Iran, Islamic Republic Of |
| Journal Index | SCOPUS ,JCR |
Abstract
A waveguide photodetector (PD) based on semi-insulating (SI) indium phosphide (InP) was simulated, designed, and fabricated. The layer stack for this PD was optimized for use as an optical amplifier or laser and it can be combined with the passive components. By using an SI substrate and deep etching, a small, efficient, and high-speed PD was made, which allows for easy integration of source, detector, and passive optical components on a single chip. A 3-dB bandwidth of 35 GHz and 0.25 A/W external radio-frequency reponsivity is measured at 1.55-mum wavelength for a 1.5-mum-wide and 30-mum-long waveguide PD at -4-V bias voltage. The polarization dependence in the responsivity is less than 0.27 dB.
tags: Photodetector (PD) , semi-insulating (SI) , semiconductor optical amplifier (SOA)