Authors | Fatemeh Fattahiyan,مریم استاد ابراهیم |
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Conference Title | 22nd Iranian Chemistry Congress |
Holding Date of Conference | 2024-05-13 - 2024-05-15 |
Event Place | 1 - تهران |
Presented by | سازمان پژوهش های علمی و صنعتی ایران |
Presentation | SPEECH |
Conference Level | International Conferences |
Abstract
We have improved the photovoltaic characteristics of the CdS/CdSe quantum dot-sensitized solar cells (QDSSCs) by employing the Al-ZnS ternary passivation layer after the deposition of CdSe QDs, which caused a lower charge recombination at the interfaces of TiO2/CdS/CdSe/polysulfide and thereby a higher collection of photoelectrons in the TiO2 film.
tags: Quantum dot sensitized solar cells; Photoanode; Passivation layer; Aluminium ion-doped ZnS; Charge recombination