| Authors | H. Ghorbani, D. Stoyan |
|---|---|
| Journal | Image Analysis & Stereology |
| Presented by | Freiberg |
| Page number | 147-152 |
| Serial number | 3 |
| Volume number | 22 |
| IF | 1.615 |
| Paper Type | Full Paper |
| Published At | 2003 |
| Journal Grade | Scientific - research |
| Journal Type | Typographic |
| Journal Country | Iran, Islamic Republic Of |
| Journal Index | Scopus |
Abstract
Formulas are derived for the spherical contact distribution of a planar germ-grain model Z with circular grains where the germs formeither a 'segment cluster' process or a 'line-based' Poisson point process. They are used in order to estimate the intensityl of the germprocess by means of the spherical contact distribution function. As an application the number of dislocations on a silicon wafer is estimated.
tags: dislocations; germ-grain model; intensity; Poison cluster process; Poison line process; silicon wafer; spherical contact distribution function