New Approach for Designing and Optimally Selecting the Parameters of Graphene nano-ribbon Transistors in the Presence of Process Variation

چکیده مقاله

GNRFET Graphene Nano-Ribbon Field-Effect Transistor is sensitive to geometric parameters. Therefore, changing parameters
circuit characteristics can be improved or degraded. In this study, we propose a new approach to optimizing the GNRFETs. The
effect of geometric and process parameters such as chirality, channel length, width, line edge roughness, oxide thickness, and
doping on characteristics of an inverter gate is investigated based on GNRFET. Analysis of power consumption, delay, PDP, and
SNM results indicate that GNRFETs adjustable parameters can significantly affect circuit performance. It is shown that SNM
increases by changing channel length and width. Moreover, by reducing the channel length from 20 nm to 10 nm, delay for
chirality (6,0) decreases by 50%, and delay for chirality (10,0) decreases by 53%. By increasing the Line Edge Roughness by 20%,
power consumption for chirality (10,0) and chirality (6,0) increases by 18% and exponentially, respectively. Also, by decreasing
the oxide thickness, SNM and power consumption are increased; however, the delay behaves differently with chiralities (6,0) and
(10,0). This research demonstrates the importance of accurately determining the GNRFET adjustable parameters according to the
design aims. A set of recommendations is provided for optimal parameters needed by digital circuit designers to use GNRFET in
their design optimally.