| Authors | Sara Khosravi Ghandomani- Bahram Khoshnevisan- Ramin Yousefi |
|---|---|
| Journal | Journal of Materials Science: Materials in Electronics |
| Paper Type | Full Paper |
| Published At | 2018-9-6 |
| Journal Grade | ISI |
| Journal Type | Typographic |
| Journal Country | Iran, Islamic Republic Of |
Abstract
The current work is the first effort to show the capability of SnTe quantum dots (QDs) in as a quantum dots solar cell device,which work in visible-near-infrared (NIR) regions, and improvement of the solar cell parameters by Eu-doping. Undoped and Eu-doped SnTe QDs with different Eu concentration from 2 to 6% were synthesized by a co-precipitation method. X-ray diffraction patterns and transmission electron microscopy images indicated that, crystallite and particle size of the samples were decreased by increasing of Eu content. Fourier-transform infrared (FTIR) and Raman spectroscopy results revealed that some vibration modes were appeared and disappeared by Eu-doping. According to the photoluminescence (PL) results, PL intensity of the doped sample was enhanced significantly in the green region in comparison to the PL intensity of the undoped sample. Ultraviolet-visible-near infrared spectroscopy results indicated that the pristine and Eu(2%)-doped samples don’t have any absorption in the visible region, while, Eu(4% and 6%)-doped SnTe QDs showed a good absorption in this region. Photocurrent measurements showed that, unlike the pristine and Eu(2%)-doped QDs, Eu(4% and 6%)-doped SnTe QDs showed a high responsivity in the visible and NIR regions. Solar cell measurements showed that, solar cell parameters such as short current density (Jsc), open circuit voltage (Voc), conversion efficiency values (η), and fill factor (FF)