| Authors | M Moradi, M Zahedifar, T Ghorbani, M Saadat, K Rostami |
|---|---|
| Journal | Studia Universitatis Babes-Bolyai, Chemia |
| Page number | 163-175 |
| Volume number | 61 |
| Paper Type | Full Paper |
| Published At | 0-0-01 |
| Journal Grade | ISI |
| Journal Type | Electronic |
| Journal Country | Iran, Islamic Republic Of |
| Journal Index | ISI |
Abstract
Cu(In,Ga)Se2 films were prepared via a sputtering route followed by selenization process on glass substrates. Having a layer sequence Mo/In/Cu-Ga with preferred thicknesses, the metallic layers were selenized at vacuum of 6×10-3 mbar and 1 atm pressure with a total gas inlet of 7 sccm. Under vacuum, only single-phase CIGS was observed while at 1 atm, other phases in addition to CIGS were formed.The metallic layers were selenized at several temperatures. Pure-phased CIGS films were obtained by selenization at 600˚C. The crystallinity of the obtained films was further enhanced by increasing the selenization temperature. The produced CIGS films were studied by X-ray diffraction (XRD), scanning electron microscope (SEM) and energy dispersion spectroscopy (EDS) techniques.