| Authors | مصطفی فرنگی ,مصطفی زاهدیفر,محمدرضا مزدیان فرد,محمدحامد پاک ضمیر |
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| Journal | APPL PHYS A-MATER |
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| Page number | 299 |
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| Volume number | 109 |
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| IF | ثبت نشده |
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| Paper Type | Full Paper |
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| Published At | 2012-07-04 |
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| Journal Grade | Scientific - research |
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| Journal Type | Electronic |
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| Journal Country | Iran, Islamic Republic Of |
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| Journal Index | SCOPUS ,JCR |
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Abstract
Silicon nanowires (SiNWs) were produced by an electroless method on FZ-Si (100) wafer, in HF/AgNO3 solution. The influence of etching time and temperature on SiNWs morphology were studied using FESEM images. Optical properties were also investigated by optical absorption spectroscopy and low-temperature photoluminescence at 4.2 K. Considering their role as active regions, photovoltaic properties of SiNWs solar cells were studied for their different lengths. Photovoltaic measurements were taken in 1 sun condition under AM 1.5 illumination supplied by a solar simulator. Measurements indicated a reduction in efficiency as SiNWs length increased, which might be attributed to increased dangling states on nanowires surfaces.
