| نویسندگان | مصطفی فرنگی ,مصطفی زاهدیفر,محمدرضا مزدیان فرد,محمدحامد پاک ضمیر |
| نشریه | APPL PHYS A-MATER |
| شماره صفحات | 299 |
| شماره مجلد | 109 |
| ضریب تاثیر (IF) | ثبت نشده |
| نوع مقاله | Full Paper |
| تاریخ انتشار | 2012-07-04 |
| رتبه نشریه | علمی - پژوهشی |
| نوع نشریه | الکترونیکی |
| کشور محل چاپ | ایران |
| نمایه نشریه | SCOPUS ,JCR |
چکیده مقاله
Silicon nanowires (SiNWs) were produced by an electroless method on FZ-Si (100) wafer, in HF/AgNO3 solution. The influence of etching time and temperature on SiNWs morphology were studied using FESEM images. Optical properties were also investigated by optical absorption spectroscopy and low-temperature photoluminescence at 4.2 K. Considering their role as active regions, photovoltaic properties of SiNWs solar cells were studied for their different lengths. Photovoltaic measurements were taken in 1 sun condition under AM 1.5 illumination supplied by a solar simulator. Measurements indicated a reduction in efficiency as SiNWs length increased, which might be attributed to increased dangling states on nanowires surfaces.