The effect of surface fluorine doping on the structure of a thin layer of SnO2 used as an electron transfer layer in optoelectronic devices

Abstract

In this research, SnO2 material was used to make a thin layer of electron carriers for use in optoelectronic devices. Optical properties such as the percentage of transmission and band gap energy and desired morphological properties such as thickness were measured and investigated. On the other hand, the quality of the surface coating and its relationship with the carrier's contact angle were studied by electrochemical characterization. Then, the effect of ammonium fluoride solution on the mentioned properties was re-examined. The observed changes were by the prerequisites of the electron transport layer in optoelectronic devices.