Authors | ندا حیدری,سیدمحمدباقر قریشی,محمد رضا فتح الهی |
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Journal | International Review of Electrical Engineering (IREE) Journal |
Page number | 89 |
Volume number | 14 |
IF | ثبت نشده |
Paper Type | Full Paper |
Published At | 2020-09-01 |
Journal Grade | Scientific - research |
Journal Type | Electronic |
Journal Country | Iran, Islamic Republic Of |
Journal Index | SCOPUS |
Abstract
All types of light emitting diodes (LEDs) are desirable because of their widespread applications. The light emitting diode based on quantum dots (QDLEDs) have a lot of unique properties attracted more attention. Predicting the performance of QDLEDs can lead to better and more efficient design of the device. In this paper, we have attempted to investigate the dependence of the device performance on the location of quantum dots (QDs) and determine the best location for the QDs in the QDLEDs. The QDs are located in five different position and results are compared with each other. The results show that the closer the QDs to the hole transport layer (HTL), the better the luminescence. This improvement can be explained by the two charge transport mechanism, direct charge injection and exciton energy transfer.
tags: Quantum dot, efficiency, light emitting diode, location