| Authors | سیدمحمدباقر قریشی,پریسا کریمی مونه,فرهاد جهان تیغ,مهدیه اسمعیلی زارع |
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| Journal | Applied Physics A: Materials Science and Processing |
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| Page number | 1 |
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| Volume number | 128 |
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| IF | ثبت نشده |
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| Paper Type | Full Paper |
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| Published At | 2022-04-16 |
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| Journal Grade | Scientific - research |
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| Journal Type | Electronic |
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| Journal Country | Iran, Islamic Republic Of |
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| Journal Index | JCR |
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Abstract
The Copper indium gallium selenide (CIGS) solar cells are considered to be an jubilant candidate for the advanced future
photovoltaic technology. In this research, the structure of the CIGS solar cell with two buffer layers of CdS and TiO2
that has
been studied. The deposited CIGS films were selenized by electrical method under argon atmosphere at high temperature.
This process was performed on the fluorine-doped tin oxide-coated (FTO) substrate. Eventually, 300 nm silver was deposited
by evaporation method as the cathode. Different parameters of this structure were simulated by using SCAPS software.
Subsequently, according to the simulation results, the role of the active layer was investigated and the optimum thickness.
Also, CIGS solar cells are simulated by real parameters (energy gap, donor and acceptor carrier density, carrier density of
the conduction band edge, conductivity). To
