SnO2 as the champion electron transporting layer for nanostructured FAPbI3 perovskite photovoltaics: A SCAPS-1D

Abstract

n this study, four electron transport layers TiO₂, C60, ZnO, and SnO₂ were evaluated for FAPbI₃-based perovskite solar cells. Under optimized conditions, SnO₂ delivered the best performance with an efficiency of 16.67%, compared to 16.40% for TiO₂, 16.48% for ZnO, and 16.61% for C60 (only as a 10 nm ultra-thin layer). Beyond ideal conditions, a sensitivity analysis was conducted for temperature (280–320 K), doping density (10¹⁰–10²⁰ cm⁻³), and ETL thickness (1–200 nm). SnO₂ showed the smallest thermal efficiency loss (8.67%) and excellent thickness tolerance, with its current remaining nearly constant at 24.15 ± 0.01 mA/cm². However, SnO₂ requires a minimum doping of ~10¹⁸ cm⁻³ to reach its full potential. Energy band diagrams confirm that SnO₂ provides favorable band alignment with FAPbI₃, minimizing interfacial recombination. Overall, SnO₂ offers the best balance of efficiency, thermal stability, and thickness insensitivity for practical applications.