| Authors | Yaser Nabati, Hami Reza Mohammadi, Abolfazl Halvaei Niasar |
|---|---|
| Conference Title | 27th Iranian Conference on Electrical Engineering (ICEE 2019) |
| Holding Date of Conference | May 2019 |
| Event Place | Yazd, Iran |
| Presented by | دانشگاه کاشان |
| Page number | 1-6 |
| Presentation | SPEECH |
| Conference Level | Internal Conferences |
Abstract
In this paper, a non-isolated dc-dc converter with high voltage gain is presented. Two techniques of inductance-diode unit and capacitor voltage multiplier have been used to achieve high voltage gain and the voltage stress on semiconductors has been reduced. Compared to conventional structures, the proposed structure has a simpler control system, higher voltage gain, and lower voltage stress at both ends of the power electronic switch. In this article, the performance of the proposed converter in continuous conduction mode (CCM) is investigated and the method of designing the nominal values of voltage and current of the elements used in the converter is presented. In the end, the simulation results are presented to confirm the theoretical analysis in the PSCAD/EMTDC environment.
tags: Step-up dc-dc converter, non-isolated dc-dc converter, inductance-diode unit