Simulation of CIGS Solar Cell with Different Ga Content Using SILVACO ATLASTM

چکیده مقاله

Today solar cells have received more attention due to increasing population, air contamination and depletion of fossil fuels. Wide-band gap chalcopyrite solar cells based on CuIn1-xGaxSe2 (CIGS) are sought for their direct and variable band gap, high efficiency and proper price. In this research the operation and performance of CIGS solar cells with Mo (500 nm) / CIGS (2000 nm) / CdS (50 nm) / ZnO (55 nm) / structure has been studied using a two dimensional, drift–diffusion approach utilizing a commercial numerical device simulator ATLAS™.