نویسندگان | فریده سادات سعیدی گلپایگانی,مهرداد مرادی کاونانی |
---|---|
نشریه | OPT COMMUN |
شماره صفحات | 126999 |
شماره مجلد | 493 |
ضریب تاثیر (IF) | ثبت نشده |
نوع مقاله | Full Paper |
تاریخ انتشار | 2021-04-07 |
رتبه نشریه | علمی - پژوهشی |
نوع نشریه | الکترونیکی |
کشور محل چاپ | ایران |
نمایه نشریه | ISC ,JCR |
چکیده مقاله
In this paper, photonic band gap (PBG) properties and electric field distribution of a one-dimensional multiperiodic photonic crystal were theoretically calculated based on a 2 2 transfer matrix method (TMM) using MATLAB software. Stacked layers of Nb2O5, Si and TiO2 were designed as a new model of the one-dimensional three-periodic photonic crystal. The results show that by changing parameters such as the layers order, number of periods, thickness of layers, defect layer thickness and the angle of incident, it is possible to engineer the width and position of PBG while also increasing the electric field intensity inside the photonic crystal. It is shown, that the [NS]2 [T]1 [NS]8 structure (N = Nb2O5, S = Si and T = TiO2) has a wider photonic band gap (PBG) allowing for applications such as laser eye protections. The [NS]2 [T]2 [NS]8 structure is found to be the highest in terms of localization of light in defect layer and being suitable for use in the photocatalysis field.
tags: 1-D photonic crystalAdjustable band gapElectric field localizationDefect