CIGS absorber layer with double grading Ga profile for highly efficient solar cells

چکیده مقاله

It is well-known that the band gap grading in CIGS solar cells is crucial for achieving highly efficient solar cells. We stimulate a CIGS solar cell and investigate the effects of the band gap grading on performance of the CIGS solar cell, where Ga/(Ga þ In) ratio (GGI) at back (Cb) and front (Cf) of the absorber layer are considered constant. Our simulations show that by increasing the GGI at middle of CIGS absorber layer (Cm), the JSC decreases and VOC increases independent of the distance of the Cm from the back contact (Xm). For Cm lower than Cf, JSC increases and VOC decreases when the Xm shifts to the front of the CIGS layer. The behavior of JSC and VOC became reverse for the case of Cm greater than Cf. Almost in all of the structures, efficiency and FF have same behaviors. Our simulations show that the highest efficiency is obtained at Cm ¼ 0.8 and Xm ¼ 200 nm.