Plasmonic thin film InP/graphene-based Schottky-junction solar cell using nanorods

چکیده مقاله

Herein, the design and simulation of graphene/InP thin film solar cells with a novel periodic array of
nanorods and plasmonic back-reflectors of the nano-semi sphere was proposed. In this structure, a
single-layer of the graphene sheet was placed on the vertical nanorods of InP to form a Schottky junction.
The electromagnetic field was determined using solving three-dimensional Maxwell’s equations discretized
by the finite difference method (FDM). The enhancement of light trapping in the absorbing layer
was illustrated, thereby increasing the short circuit current to a maximum value of 31.57 mA/cm
with nanorods having a radius of 400 nm, height of 1250 nm, and nano-semi sphere radius of 50 nm, under
a solar irradiation of AM1.5G. The maximum ultimate efficiency was determined to be 45.8% for an angle
of incidence of 60. This structure has shown a very good light trapping ability when graphene and ITO
layers were used at the top and as a back-reflector in the proposed photonic crystal structure of the InP
nanorods. Thence, this structure improves the short-circuit current density and the ultimate efficiency of
12% and 2.7%, respectively, in comparison with the InP-nanowire solar cells.