| Authors | M. Farangi - M. Zahedifar - M.R. Mozdianfard -M.H. Pakzamir |
|---|---|
| Journal | Applied Physics A |
| Paper Type | Full Paper |
| Published At | November 2012 |
| Journal Grade | Scientific - research |
| Journal Type | Typographic |
| Journal Country | Iran, Islamic Republic Of |
Abstract
Silicon nanowires (SiNWs) were produced by an electroless method on FZ-Si (100) wafer, in HF/AgNO3 solution. The influence of etching time and temperature on SiNWs morphology were studied using FESEM images. Optical properties were also investigated by optical absorption spectroscopy and low-temperature photoluminescence at 4.2 K. Considering their role as active regions, photovoltaic properties of SiNWs solar cells were studied for their different lengths. Photovoltaic measurements were taken in 1 sun condition under AM 1.5 illumination supplied by a solar simulator. Measurements indicated a reduction in efficiency as SiNWs length increased, which might be attributed to increased dangling states on nanowires surfaces.