| Authors | Moradi M- Zahedifar M- Ghorbani T- Saadat M- Rostami K |
|---|---|
| Journal | STUD U BABES-BOL CHE |
| Paper Type | Full Paper |
| Published At | 2015 |
| Journal Grade | Scientific - research |
| Journal Type | Typographic |
| Journal Country | Iran, Islamic Republic Of |
Abstract
Cu(In,Ga)Se2 films were prepared via a sputtering route followed by selenization process on glass substrates. Having a layer sequence Mo/In/Cu-Ga with preferred thicknesses, the metallic layers were selenized at vacuum of 6×10-3 mbar and 1 atm pressure with a total gas inlet of 7 sccm. Under vacuum, only single-phase CIGS was observed while at 1 atm, other phases in addition to CIGS were formed.The metallic layers were selenized at several temperatures. Pure-phased CIGS films were obtained by selenization at 600˚C. The crystallinity of the obtained films was further enhanced by increasing the selenization temperature. The produced CIGS films were studied by X-ray diffraction (XRD), scanning electron microscope (SEM) and energy dispersion spectroscopy (EDS) techniques.