| Authors | E. Ghanbari- M. Zahedifar- O. Amiri1 |
|---|---|
| Journal | Journal of Materials Science: Materials in Electronics |
| Paper Type | Full Paper |
| Published At | january ۲۰۱۸ |
| Journal Grade | ISI |
| Journal Type | Typographic |
| Journal Country | Iran, Islamic Republic Of |
Abstract
CIGS nanoparticles (NPs) were synthesized by solvothermal method. The effects of using argon and nitrogen as autoclave atmosphere and also metallic indium (
Inmet) and InCl3 as indium precursors at different temperature profiles on crystalline
phase of the fabricated CIGS NPs were investigated. Results show that producing single phase CIGS in N2 atmosphere is not possible. In Ar atmosphere, CuIn0.5Ga0.5Se2
pure phase was formed only by using InCl3 as indium precursor. In addition to CIGS, CuGaSe2
can also be observed, but CIS phase is not formed by using this approach. The particle size in the range
of 20–45 nm was detected by XRD and SEM images. UV–visible absorption spectrum showed a broad peak in UV–visible range. Also reported is the unusual behavior of the produced NPs in different atmospheres.