The Preparation of CIGS Absorber Layers with Two Different Methods

چکیده مقاله

CIGS layers were fabricated by using two different methods, sputtering and thermal evaporation of precursors onto the Mo coated soda-lime glass (SLG) substrates. The CIG precursors were converted into CIGS absorption thin film by selenization process. An increase of the Ga content in the active region of the absorber was achieved by the introduction of a thin Ga layer on the Mo back contact. The effects of the using CIG precursors prepared by various methods on the composition of CIGS thin films were investigated. The ratios of [Cu]/ [In+Ga] and [Ga]/[In+Ga] for samples were between 0.51 to 1.00 and 0.01 to 0.23 respectively. Atomic composition of Ga (45nm)/In (165nm)/Cu (155nm)/In (135nm)/Cu (65nm)/Ga (85nm) is well matched for highest efficient CIGS-based solar cell so far.