Optimal conditions for fabricating CIGS nanoparticles by solvothermal method

چکیده مقاله

CIGS nanoparticles (NPs) were synthesized by solvothermal method. The efects of using argon and nitrogen as autoclave atmosphere and also metallic indium (Inmet ) and InCl3 as indium precursors at diferent temperature proiles on crystalline phase of the fabricated CIGS NPs were investigated. Results show that producing single phase CIGS in N2 atmosphere is not possible. In Ar atmosphere, CuIn0.5Ga0.5Se2 pure phase was formed only by using InCl3 as indium precursor. In addition to CIGS, CuGaSe2 can also be observed, but CIS phase is not formed by using this approach. The particle size in the range of 20–45 nm was detected by XRD and SEM images. UV–visible absorption spectrum showed a broad peak in UV–visible range. Also reported is the unusual behavior of the produced NPs in diferent atmospheres.