Fabrication of field-effect transistor (FET) based on ZnO nanowire/graphene nanoribbon heterostructures

چکیده مقاله

We present a fabrication of a field-effect transistor device based on a single ZnO nanowire and graphene nanoribbon heterostructures. We demonstrate that it is possible to fabricate a graphene nanoribbon using a single ZnO nanowire as a shadow mask for oxygen reactive ion etching. Au electrodes were also coated on two sides of ZnO nanowire using UV photolithography. The fabricated nanowire/graphene nanoribbon heterostructure was electrically analysed to obtain field effect properties of device.