| نویسندگان | محمد الماسی کاشی-عبد العلی رمضانی-مریم غفاری-وحیده بیضی اصفهانی |
|---|---|
| نشریه | J CRYST GROWTH |
| نوع مقاله | Full Paper |
| تاریخ انتشار | 2009-8-01 |
| رتبه نشریه | ISI |
| نوع نشریه | چاپی |
| کشور محل چاپ | ایران |
| نمایه نشریه | ISI ,SCOPUS |
چکیده مقاله
Non-symmetricreductive/oxidativevoltagewasemployedtoelectrodeposittheConanowiresthrough the aluminabarrierlayerintoporousaluminumoxidetemplatesgrowninoxalicacid.Theminimum and maximumoxidativevoltageswere12and18Vwhilethemaximumdifferencebetweenthe oxidativeandreductivevoltagewas6V.Theeffectofbarrierlayermodificationonthegrowthrateof the Conanowiresduringtheelectrodepositionprocedurewasstudied.Inordertoinvestigatetheeffects of thenon-symmetricelectrodepositionvoltageonthegrowthratethewire’slength,thesaturation magnetization,theinstantaneousandthermscurrentweremeasured.Differentreductive/oxidative voltagesenableustofabricateelectrodepositednanowireswithawidevarietyofgrowthrates.Using same reductivevoltage,reducingtheoxidativevoltageincreasedthegrowthrate.Atthesamereductive voltage(18V),averagegrowthratewasseentoincrease2.5times,whentheoxidativevoltagereduces to 12Vfrominitially18V.Thebarrierlayerthicknessofthesamplesmadewithdifferentnon- symmetricreductive/oxidativedepositionvoltagewasinvestigatedthroughimpedancemeasurement during thedepositionprocedure.Reducingthegrowthrateofdepositionreducestheintensityofthe (100)preferentialdirectionofhcpphasetherebyimprovingthemagneticproperties.Manipulatingthe growthratethroughnon-symmetricelectrodepositionenablesustofabricatetheConanowireswith coercivity rangingfrom460to1850Oe.