Full Analysis of a High-Bandwidth Microring-Based InP Modulator

چکیده مقاله

This study presents a new simulation strategy for a high-speed microring-based PIN modulator using the finite element method. It includes DC and transient simulations of the electro-optical behaviors of the device. Variations in the effective refractive index and their effect on the optical output fields are determined by applying a reverse bias voltage pulse to the device. The frequency responses were calculated for the microring modulator and 3-dB bandwidth. Calculations show a 3-dB bandwidth of over 115 GHz for a ring with a radius of 8 µm and a width of 0.5 µm at -7 V biasing voltage.