Hybrid Plasmonic Ring-Resonator Uni-Travelling Carrier Pin-Photodetector on InGaAsP/InP Layer Stack

نویسندگانعلی رستمی خمامی,محمود نیکو فرد
نشریهIEEE T ELECTRON DEV
ضریب تاثیر (IF)ثبت نشده
نوع مقالهFull Paper
تاریخ انتشار2020-06-18
رتبه نشریهعلمی - پژوهشی
نوع نشریهالکترونیکی
کشور محل چاپایران
نمایه نشریهSCOPUS ,JCR

چکیده مقاله

In the present study, for the first time, a hybrid plasmonic ring resonator uni-travelling carrier pin-photodetector was numerically presented that offers high responsivity of 0.68 A/W, high bandwidth of over 125 GHz, and low footprint. This device has the capability of monolithic integration with HP-passive devices on the InP platform at an optical communication wavelength of 1550 nm.

tags: Nanophotonics, hybrid plasmonic waveguide, uni-Travelling carrier pin-photodetector, ring resonator, InGaAsP materials