Fabrication of TlSnI3/C3N4 nanocomposites for enhanced photodegradation of toxic contaminants below visible light and investigation of kinetic and mechanism of photocatalytic reaction

Abstract

The use of sufficient solar irradiation for the semiconductor photodegradation of organic pollutants is an excellent technique to tackle worldwide water contamination. Photocatalysis is an eco-friendly method that is familiar for the breakdown of toxic pollutants in sewage. Many semiconductor heterojunctions have been widely employed to intensify photocatalytic efficiency compared to single semiconductors. Polymeric semiconductors such as graphitic carbon nitride (g-C3N4) have been considered inspirational applicants due to their easily adjustable electronic structure and adaptable optical absorption properties. Disadvantages of the current photocatalytic method, which limit their uses, include the rapid recombination, low emigration ability of the photo-generated electron-hole, and low use of visible radiation. The current study designates the preparation of novel TlSnI3/g-C3N4 nanocomposites by ultrasoundassisted coprecipitation technique. The bandgap was estimated at 2.7 eV for pristine g-C3N4. The bandgap of nanocomposite was decreased to 2.5 eV by enhancing TlSnI3 content due to the narrow bandgap of TlSnI3 (2.3 eV). This nanocomposite possesses a high ability to decompose organic dyes due to its relevant bandgap being a prominent catalyst for water treatment. The photocatalytic ability of TlSnI3/C3N4 was examined over the removal of Methylene Blue (MB), Malachite Green (MG), and Rhodamine B (RhB) under visible light. The as-synthesized TlSnI3/C3N4 nanocomposites exposed better photocatalytic performance than the pure TlSnI3 and C3N4.