Er-Doped SnO2 as an Electron Transport Layer for Efficient Inorganic MAPbI3 Perovskite Solar Cells with Improved Performance

چکیده مقاله

Perovskite solar cells (PSCs) have garnered great attention from researchers, and their excellent photovoltaic properties are rapidly advancing. The compact layer is a crucial component of PSCs, facilitating the transport of holes and electrons. Erbium doping, which has a radius comparable to that of tin, enhances the performance of the compact layer by increasing conductivity and improving the device’s photoelectric efficiency through the creation of oxygen vacancies and tin (IV) ions. Variable doping concentrations of Er-SnO2 compact layers were prepared for use in planar-architecture perovskite solar cells (PSCs). Doping of 7.00% erbium in the SnO2 compact layer indicated that the ITO/Er:SnO2/MAPbI3/CuPc/Au cell achieves a current density of approximately 12.68 mA.cm-2 compared to the ITO/SnO2/MAPbI3/CuPc/Au cell, which has a current density of about 2.40 mA/cm². This important enhancement refers to the light absorption characteristics of Er:SnO2/ MAPbI3 and the rapid electron and hole transfer processes in Er:SnO2 and CuPc. In this research, we studied the power conversion efficiency (PCE) of solar cells. The results showed that a significant enhancement in photovoltaic properties can be achieved by utilizing spin-coated CuPc nanoparticles as the hole transport layer, with an increase of at least 5% compared to the ITO/SnO2/MAPbI3/CuPc/Au Structure.