Electrodeposition of CIGS nanostructure photovoltaic absorber layers: effect of deposition time

چکیده مقاله

Electr odeposited CIGS absorber layers are fabric ated by a three-sta ge electrodep ositi on process in which: (a) CIGS is elect rodep osited in the first stage, (b) Cu is electrodep osited in the secon d sta ge, and (c) an In layer is deposi ted in the final third stage. All films are elect rodeposi ted from an aqueou s solu tion containing CuSO 4 , InCl 3 , SeCl 4 and GaCl 3 (pH around 1.5 adju sted with H2 SO 4 ) at room temper ature in a thr ee-elect rode cel l configur ation. The electrodep osited films are sel enized at high temper ature under argon atmosp here. The eff ects of deposit ion parame ters such as: the deposi tion time and potenti al; and type of substrate were inve stigated. It was found that morphol ogy and partic le size o f the produc ts could be greatly affected by these para meters. As a result, under the same condition, the particles size of CIGS films elect rodeposi ted on the FTO glass as subst rate are smaller than the particles size of CIGS ele ctrodepo sited on the Mo-coated glass. Th e In, Ga and Cu– In–Ga–Se electrodep osi-tion systems were inve stigated by cycl ic voltamm etry. CIGS nanost ructures were charact erized by X-ray powder diffract ion, scann ing electron micro scopy (SE M), X-ray energy dispers ive spect roscopy, atomi c force mi croscopy, cross-s ection SEM , and UV–Vis diffuse reflec tance spectro scopy.