نویسندگان | ندا حیدری,سیدمحمدباقر قریشی,محمد رضا فتح الهی |
---|---|
نشریه | International Review of Electrical Engineering (IREE) Journal |
شماره صفحات | 89 |
شماره مجلد | 14 |
ضریب تاثیر (IF) | ثبت نشده |
نوع مقاله | Full Paper |
تاریخ انتشار | 2020-09-01 |
رتبه نشریه | علمی - پژوهشی |
نوع نشریه | الکترونیکی |
کشور محل چاپ | ایران |
نمایه نشریه | SCOPUS |
چکیده مقاله
All types of light emitting diodes (LEDs) are desirable because of their widespread applications. The light emitting diode based on quantum dots (QDLEDs) have a lot of unique properties attracted more attention. Predicting the performance of QDLEDs can lead to better and more efficient design of the device. In this paper, we have attempted to investigate the dependence of the device performance on the location of quantum dots (QDs) and determine the best location for the QDs in the QDLEDs. The QDs are located in five different position and results are compared with each other. The results show that the closer the QDs to the hole transport layer (HTL), the better the luminescence. This improvement can be explained by the two charge transport mechanism, direct charge injection and exciton energy transfer.
tags: Quantum dot, efficiency, light emitting diode, location