Simulation of perovskite solar cell with P۳HT hole-transporting materials

چکیده مقاله

The performance of perovskite solar cells was investigated using the simulation programs SCAPS and AMPS-1D. This paper is a study of the effects of hole density concentrations, defect density, thickness of perovskite active layers, P3HT HTM layer thickness, hole mobility, working temperature and varying illumination intensity on the performance (PCE), of open-circuit voltage(VOC), fill factor(FF), short-circuit current density(JSC) and the simulation of J-V curves solar cells for varying illumination intensity. Then, J-V characteristics and quantum efficiency were calculated for different thickness absorbers and HTM layers. The simulation results showed an optimal value for the absorber layer thickness and for the hole-transporting material layer. Also, a raise in the temperature had a strong effect on the perovskite solar cells performance. These simulation results serve to provide several important guidelines for feasible fabrication of higher-performance perovskite solar cells