Investigation of structural and optoelectronic properties of annealed nickel phthalocyanine thin films

نویسندگانمینا نقابی,مهدی زادسر,سیدمحمدباقر قریشی
نشریهMAT SCI SEMICON PROC
شماره صفحات13
شماره مجلد17
ضریب تاثیر (IF)ثبت نشده
نوع مقالهFull Paper
تاریخ انتشار2013-09-11
رتبه نشریهعلمی - پژوهشی
نوع نشریهالکترونیکی
کشور محل چاپایران
نمایه نشریهISI

چکیده مقاله

Thin films of nickel phthalocyanine (NiPc) were prepared by thermal evaporation and the effects of annealing temperature on the structural and optical properties of the samples were studied using different analytical methods. Structural analysis showed that the grain size and crystallinity of NiPc films improved as annealing temperature increased from 25 to 150 °C. Also, maximum grain size (71.3 nm) was obtained at 150 °C annealing temperature. In addition, NiPc films annealed at 150 °C had a very smooth surface with an RMS roughness of 0.41 nm. Optical analysis indicated that band gap energy of films at different annealing temperatures varied in the range of 3.22–3.28 eV. Schottky diode solar cells with a structure of ITO/PEDOT:PSS/NiPc/Al were fabricated. Measurement of the dark current density–voltage (J–V) characteristics of diodes showed that the current density of films annealed at 150 °C for a given bias was greater than that of other films. Furthermore, the films revealed the highest rectification ratio (23.1) and lowest barrier height (0.84 eV) demonstrating, respectively, 23% and 11% increase compared with those of the deposited NiPc films. Meanwhile, photoconversion behavior of films annealed at 150 °C under illumination showed the highest short circuit current density (0.070 mA/cm2) and open circuit voltage of (0.55 V).

tags: Organic semiconductors Metal-substituted phthalocyanine Schottky barriers Charge transport Thermal evaporation